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| VHFD 37 Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes VRRM = 800-1600 V IdAVM = 40 A VRSM VDSM V 900 1300 1500 1700 VRRM VDRM V 800 1200 1400 1600 Type 3 12 5 VHFD 37-08io1 VHFD 37-12io1 VHFD 37-14io1 VHFD 37-16io1 6 8 10 Bridge and Freewheeling Diode Symbol IdAV IdAVM x IFRMS, ITRMS IFSM, ITSM Test Conditions TH = 85C, module module per leg TVJ = 45C; VR = 0 V TVJ = TVJM VR = 0 V I2t TVJ = 45C VR = 0 V TVJ = TVJM VR = 0 V (di/dt)cr t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 36 40 31 320 350 280 310 500 520 390 400 150 A A A A A A A A2s A2s A2s A2s A/ms q q q q q q q Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1600 V Low forward voltage drop Leads suitable for PC board soldering UL registered E 72873 Applications Supply for DC power equipment DC motor control q q TVJ = 125C repetitive, IT = 50 A f = 50 Hz, tP = 200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 0.5 IdAV diG/dt = 0.3 A/ms TVJ = T(vj)m; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = 0.5 IdAVM tp = 30 ms tp = 500 ms tp = 10 ms q q q 500 1000 10 10 5 1 0.5 A/ms V/ms V W W W W C C C V~ V~ mm mm m/s2 Nm lb.in. g Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling (dv/dt)cr VRGM PGM Dimensions in mm (1 mm = 0.0394") PGAVM TVJ TVJM Tstg VISOL dS dA a Md Weight (c) 2000 IXYS All rights reserved 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s -40...+125 125 -40...+125 3000 3600 12.7 9.4 50 2-2.5 18-22 35 Creep distance on surface Strike distance in air Max. allowable acceleration Mounting torque (M5) (10-32 UNF) 1-3 VHFD 37 Symbol IR, ID VT, VF VT0 rT VGT IGT Test Conditions VR = VRRM; VD = VDRM IT, IF = 45 A; TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 125C VD = 2/3 VDRM VD = 2/3 VDRM TVJ = 25C TVJ = -40C TVJ = 125C typ. TVJ = TVJM TVJ = 25C Characteristic Values 5 0.3 1.45 0.85 13 1.0 1.2 65 80 50 0.2 5 150 200 100 100 2 150 75 1.2 0.3 1.55 0.39 mA mA V V mW V V mA mA mA V mA mA mA mA mA ms ms mC K/W K/W K/W K/W 1000 s tgd 100 typ. Limit TVJ = 25C 0.1 1 1 10 1: IGT, TVJ = 125C V VG 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 2 3 6 4 5 VGD IGD IL TVJ = TVJM; TVJ = TVJM; IG = 0.3 A; tG = 30 ms; diG/dt = 0.3 A/ms; IGD, TVJ = 125C 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 1 10 100 1000 IG mA IH tgd tq Qr RthJC RthJH TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 125C, IT = 15 A, tP = 300 ms, VR = 100 V di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM per thyristor (diode); DC current per module per thyristor (diode); DC current per module Fig. 1 Gate trigger range 10 Field Diodes Symbol IFAV IFAVM IFRMS IFSM Test Conditions TH = 85C, per Diode per diode per diode TVJ = 45C; VR = 0 V TVJ = TVJM VR = 0 V I2t TVJ = 45C VR = 0 V TVJ = TVJM VR = 0 V IR VF VT0 rT RthJC RthJH VR = VRRM IF = 21 A; TVJ = 25C For power-loss calculations only (TVJ = 125C) per diode; DC current per diode; DC current t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM TVJ = 25C Maximum Ratings 4 4 6 100 110 85 94 50 50 36 37 1 0.15 1.83 0.9 50 4.4 5.2 A A A A A A A A2s A2s A2s A2s mA mA V V mW K/W K/W 1 10 100 IG mA 1000 Fig. 2 Gate controlled delay time tgd (c) 2000 IXYS All rights reserved 2-3 750 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. x for resistive load IXYS reserves the right to change limits, test conditions and dimensions. VHFD 37 70 A 60 IF 50 40 30 100 20 300 A 50Hz, 80% VRRM 103 As I2t 2 VR = 0 V typ. 250 IFSM 200 TVJ = 45C TVJ = 45C TVJ = 125C TVJ = 125C TVJ = 25C max. 150 102 TVJ = 125C 10 0 0.0 50 0.5 1.0 VF 1.5 V 2.0 0 0.001 101 0.01 0.1 t s 1 1 2 3 4 5 6 7 8 910 ms t Fig. 3 Forward current versus voltage drop per diode 120 W 100 Ptot 80 Fig. 4 Surge overload current Fig. 5 I2t versus time per diode 50 A RthHA : 0.5 1.0 1.5 2.0 3.0 4.0 6.0 K/W K/W K/W K/W K/W K/W K/W 40 Id(AV)M 30 60 20 40 10 20 0 0 10 20 30 40 IF(AV)M A 0 20 40 60 80 100 120 C 140 Tamb 0 0 20 40 60 80 100 120 C TH Fig. 6 Power dissipation versus direct output current and ambient temperature 2.0 K/W 1.5 ZthJH Fig. 7 Max. forward current versus heatsink temperature 1.0 Constants for ZthJH calculation: i Rthi (K/W) 0.005 0.2 0.875 0.47 ti (s) 0.008 0.05 0.06 0.25 0.5 1 2 3 4 0.01 0.1 1 t s 10 0.0 0.001 Fig. 8 Transient thermal impedance junction to heatsink (c) 2000 IXYS All rights reserved 3-3 |
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